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	<title>ECE492 Section 3 Notes - Revision history</title>
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		<title>Eddynetweb: Starting 3.1 notes on MOSFET.</title>
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		<updated>2022-04-12T00:28:21Z</updated>

		<summary type="html">&lt;p&gt;Starting 3.1 notes on MOSFET.&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;Welcome! Notes for Spring 2022 Electronic Circuits course. Will make this more pretty as things evolve. &lt;br /&gt;
&lt;br /&gt;
My goal is to make Electronic Circuits so easily digestible, you could teach a middle schooler. We&amp;#039;ll see if this works. &lt;br /&gt;
&lt;br /&gt;
== Prologue ==&lt;br /&gt;
&lt;br /&gt;
Hey how are you. I will insert something here later. :)&lt;br /&gt;
&lt;br /&gt;
== Section 3.1 == &lt;br /&gt;
&lt;br /&gt;
What is a &amp;#039;&amp;#039;&amp;#039;MOSFET&amp;#039;&amp;#039;&amp;#039;?&lt;br /&gt;
* Stands for: Metal Oxide Semiconductor Field Effect Insulator.&lt;br /&gt;
* Yay!&lt;br /&gt;
&lt;br /&gt;
See Figure 3a.&lt;br /&gt;
&lt;br /&gt;
Has 3 sides:&lt;br /&gt;
* Gate, Drain, and Source&lt;br /&gt;
* The gate current is always 0 (Ig = 0). &lt;br /&gt;
* It is a symmetrical device (drain as source and vice versa). &lt;br /&gt;
* Length of channel is typically 0.03um to 1um&lt;br /&gt;
* Width of channel is typically 1um to 100um.&lt;br /&gt;
* Gate current is typically 0mA (10^-15mA)&lt;br /&gt;
* Drain voltage in position...&lt;br /&gt;
&lt;br /&gt;
Threshold Voltage (Vt)&lt;br /&gt;
* At which a sufficient number of mobile electrons accumulate in the channel region to form a conducting channel. &lt;br /&gt;
&lt;br /&gt;
Effective Voltage (or Overdrive Voltage) &lt;br /&gt;
* Vov = Vgs - Vt&lt;br /&gt;
&lt;br /&gt;
Additional formulas to consider: &lt;br /&gt;
* Kn&amp;#039; = UnCox = Process Transconductance Parameter&lt;br /&gt;
** Un = Electron mobility&lt;br /&gt;
** Cox = Oxide capacitance&lt;br /&gt;
** Kn = MOSFET transconductance  parameter = Kn&amp;#039;[w/L]&lt;br /&gt;
* r_DS = Channel Resistance = [1/g_DS] = [1/[UnCox][w/L][Vgs-Vt]]&lt;br /&gt;
* At V_DS, the channel is going to be deepest at the source and shallower at the drain. &lt;br /&gt;
* Channel resistance is inversely proportional to the gate voltage. &lt;br /&gt;
&lt;br /&gt;
* Channel pinch off: &lt;br /&gt;
* The zero depth of the channel at the drain ends because of V_DS = V_GS - V_E&lt;br /&gt;
** If V_GS &amp;lt; Vtn then no channel, so transistor is working in cut off region (I_D = 0)&lt;br /&gt;
&lt;br /&gt;
* MOSFET operation&lt;br /&gt;
** Tniode region&lt;br /&gt;
** Saturation region&lt;br /&gt;
&lt;br /&gt;
&lt;br /&gt;
&lt;br /&gt;
Now we&amp;#039;ll cover (B) Common Emitter Current gain: &lt;br /&gt;
* &amp;lt;math&amp;gt;B=\frac{I_{c}}{I_{b}}&amp;lt;/math&amp;gt;&lt;br /&gt;
* 50 &amp;lt; B &amp;lt; 200&lt;br /&gt;
&lt;br /&gt;
...and (Alpha) Common Base Current Gain: &lt;br /&gt;
* &amp;lt;math&amp;gt;Alpha = \frac{B}{B+1} = \frac{I_{c}}{I_{e}}&amp;lt;/math&amp;gt;&lt;br /&gt;
&lt;br /&gt;
=== Header 2 ===&lt;br /&gt;
&lt;br /&gt;
It sometimes allow current, and sometimes it doesn&amp;#039;t.&lt;br /&gt;
&lt;br /&gt;
&lt;br /&gt;
===Assignment 1.1===&lt;br /&gt;
&lt;br /&gt;
We&amp;#039;ll take this &amp;lt;math&amp;gt;x_{3}=\frac{9}{3}&amp;lt;/math&amp;gt; and plug it into &amp;lt;math&amp;gt;2x_{2}+x_{3}=5&amp;lt;/math&amp;gt; to find x&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt;: &lt;br /&gt;
&lt;br /&gt;
&amp;lt;math&amp;gt; &lt;br /&gt;
\begin{align}&lt;br /&gt;
2x_{2}+x_{3}=5 \\&lt;br /&gt;
x_{3}=\frac{9}{3} \\&lt;br /&gt;
\text{Plug in } x_{3}=\frac{9}{3} \text{ into } 2x_{2}+x_{3}=5 \text{:} \\&lt;br /&gt;
2x_{2}+\frac{9}{3}=5 \\&lt;br /&gt;
2x_{2}=2 \\&lt;br /&gt;
x_{2}=1&lt;br /&gt;
\end{align}&lt;br /&gt;
&amp;lt;/math&amp;gt;&lt;/div&gt;</summary>
		<author><name>Eddynetweb</name></author>
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